"tetralayer" meaning in All languages combined

{
  "etymology_templates": [
    {
      "args": {
        "1": "en",
        "2": "tetra",
        "3": "layer"
      },
      "expansion": "tetra- + layer",
      "name": "prefix"
    }
  ],
  "etymology_text": "From tetra- + layer.",
  "forms": [
    {
      "form": "tetralayers",
      "tags": [
        "plural"
      ]
    }
  ],
  "head_templates": [
    {
      "args": {},
      "expansion": "tetralayer (plural tetralayers)",
      "name": "en-noun"
    }
  ],
  "lang": "English",
  "lang_code": "en",
  "pos": "noun",
  "senses": [
    {
      "categories": [
        {
          "kind": "other",
          "name": "English entries with incorrect language header",
          "parents": [
            "Entries with incorrect language header",
            "Entry maintenance"
          ],
          "source": "w"
        },
        {
          "kind": "other",
          "name": "English terms prefixed with tetra-",
          "parents": [],
          "source": "w"
        },
        {
          "kind": "other",
          "name": "Pages with 1 entry",
          "parents": [],
          "source": "w"
        },
        {
          "kind": "other",
          "name": "Pages with entries",
          "parents": [],
          "source": "w"
        }
      ],
      "examples": [
        {
          "ref": "2015, Ignacio Gutiérrez-Lezama, Ashish Arora, Alberto Ubaldini, Céline Barreteau, Enrico Giannini, Marek Potemski, Alberto F. Morpurgo, “Indirect-to-direct band-gap crossover in few-layer MoTe₂”, in Nano Lett., volume 2015:",
          "text": "A quantitative analysis of this behavior and of all our experimental observations is fully consistent with mono and bilayer MoTe#x5F;2 being direct band-gap semiconductors, with tetralayer MoTe#x5F;2 being an indirect gap semiconductor, and with trilayers having nearly identical direct and indirect gaps.This conclusion is different from the one reached for other recently investigated semiconducting transition metal dichalcogenides, for which only monolayers are found to be direct band-gap semiconductors, with thicker layers having indirect band gaps that are significantly smaller, by hundreds of meV, than the direct gap.",
          "type": "quote"
        }
      ],
      "glosses": [
        "A structure composed of four layers"
      ],
      "id": "en-tetralayer-en-noun-CQ~dch2m",
      "links": [
        [
          "layer",
          "layer"
        ]
      ]
    }
  ],
  "word": "tetralayer"
}

{
  "etymology_templates": [
    {
      "args": {
        "1": "en",
        "2": "tetra",
        "3": "layer"
      },
      "expansion": "tetra- + layer",
      "name": "prefix"
    }
  ],
  "etymology_text": "From tetra- + layer.",
  "forms": [
    {
      "form": "tetralayers",
      "tags": [
        "plural"
      ]
    }
  ],
  "head_templates": [
    {
      "args": {},
      "expansion": "tetralayer (plural tetralayers)",
      "name": "en-noun"
    }
  ],
  "lang": "English",
  "lang_code": "en",
  "pos": "noun",
  "senses": [
    {
      "categories": [
        "English countable nouns",
        "English entries with incorrect language header",
        "English lemmas",
        "English nouns",
        "English terms prefixed with tetra-",
        "English terms with quotations",
        "Pages with 1 entry",
        "Pages with entries"
      ],
      "examples": [
        {
          "ref": "2015, Ignacio Gutiérrez-Lezama, Ashish Arora, Alberto Ubaldini, Céline Barreteau, Enrico Giannini, Marek Potemski, Alberto F. Morpurgo, “Indirect-to-direct band-gap crossover in few-layer MoTe₂”, in Nano Lett., volume 2015:",
          "text": "A quantitative analysis of this behavior and of all our experimental observations is fully consistent with mono and bilayer MoTe#x5F;2 being direct band-gap semiconductors, with tetralayer MoTe#x5F;2 being an indirect gap semiconductor, and with trilayers having nearly identical direct and indirect gaps.This conclusion is different from the one reached for other recently investigated semiconducting transition metal dichalcogenides, for which only monolayers are found to be direct band-gap semiconductors, with thicker layers having indirect band gaps that are significantly smaller, by hundreds of meV, than the direct gap.",
          "type": "quote"
        }
      ],
      "glosses": [
        "A structure composed of four layers"
      ],
      "links": [
        [
          "layer",
          "layer"
        ]
      ]
    }
  ],
  "word": "tetralayer"
}